In:
ECS Journal of Solid State Science and Technology, The Electrochemical Society, Vol. 11, No. 6 ( 2022-06-01), p. 065004-
Abstract:
In this paper, the electrical and ultraviolet optoelectronic properties of the interdigitated finger geometry β -Ga 2 O 3 photodetector were investigated from the temperature of 40 K to 300 K. Under different light illumination conditions, when the temperature increased from 40 K to 300 K, the maximum current of the β -Ga 2 O 3 photodetector was obtained around 180 K, which is related to the carrier mobility of β -Ga 2 O 3 . Under 365-nm illumination, when the temperature increased from 40 K to 300 K, the photo-to-dark current ratio (PDCR) of the β -Ga 2 O 3 photodetector increased by 924%. Under 254-nm illumination, the PDCR decreased by 87%. Besides, the temperature point corresponding to the photoresponse peak under 365-nm illumination moved to the right under 254-nm illumination, indicating that the photodetector had a redshift at low temperature. Moreover, the fast photoresponse time under 365-nm and 254-nm illumination decreased when the temperature increased. This indicated that the defect concentration of Ga 2 O 3 decreased gradually as the temperature increased, leading to the faster response time of the photodetector.
Type of Medium:
Online Resource
ISSN:
2162-8769
,
2162-8777
DOI:
10.1149/2162-8777/ac7419
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2022
