In:
ECS Meeting Abstracts, The Electrochemical Society, Vol. MA2016-02, No. 49 ( 2016-09-01), p. 3648-3648
Abstract:
GaN based photoelectrode with a nanowire structure have been studied due to superior performance of water splitting ability. Self‐organized GaN nano‐rod on silicon has been demonstrated, and a direct growth via vapour–liquid–solid using metal particle as a catalyst has been reported. Nonowire structure has benefit with short minority carrier diffusion lengths and large surface-to-volume ratio. It allows minor carrier to easily reach to surface without recombination, so that water splitting ability could be increased. However, this structure has photocorrosion problem. For solving this problem, we covered graphene material on the tips of nanowires as a passivation layer. Graphene has been known to have excellent mechanical, thermal, optical, and electrical properties. For these reasons, we studied the photoelectrochemical water splitting properties of graphene coated GaN nanowire (graphene/GaN nanowire) photoelectrode. GaN nanowire sample without graphene was used for the reference. The GaN nanowire structures were grown on n-type Si(111) substrates using radio-frequency plasma-assisted molecular beam epitaxy. The graphene was grown by chemical vapor deposition method and exfoliated to surface of GaN nanowire. As a result, compared with non-coated GaN nanowire sample, the graphene/GaN nanowire phoeoelectrode showed higher photocurrent density. Also, we could know that it has much higher photocurrent stability. We will present the results and the reasons for higher efficiency and stability of this graphene coated GaN nanowire sample at this conference. Reference [1] Allon I. Hochbaum, and Peidong Yang, Chem. Rev., 110 (2010) 527–546 [2] B. AlOtaibi, M. Harati, S. Fan, S. Zhao, H. P. T. Nguyer, M. G. Kibiria, and Z. Mi, Nanot echnology, 24 (2013) 175401
Type of Medium:
Online Resource
ISSN:
2151-2043
DOI:
10.1149/MA2016-02/49/3648
Language:
Unknown
Publisher:
The Electrochemical Society
Publication Date:
2016
detail.hit.zdb_id:
2438749-6
