In:
Advances in X-ray Analysis, Cambridge University Press (CUP), Vol. 39 ( 1995), p. 439-448
Abstract:
In this work we apply high-resolution X-ray diffractometry to the study of InGaAs/GaAs multiple quantum well structures on (001) and(lll)B GaAs substrates. The samples consisted of p-i-n diodes with a multiple quantum well embedded in the i-region and were simultaneously grown on (001) and (111)B substrates by molecular beam epitaxy. For the characterization we have used symmetric and asymmetric reflections at different azimuthal positions. The interpretation of the diffraction profiles has been possible thanks to our recently developed simulation model, which allows the calculation of any reflection regardless of the substrate orientation. X-ray results about composition and thickness are very similar in the samples simultaneously grown on both orientations as expected from our specific growth conditions. The information obtained from X-ray characterization is consistent with the results of photoluminescence and photocurrent measurements within the experimental uncertainty of the techniques. In (lll)B samples, X-ray diffractometry provides structural information which cannot be easily obtained from optical characterization techniques.
Type of Medium:
Online Resource
ISSN:
0376-0308
,
2631-3626
DOI:
10.1154/S0376030800022850
Language:
English
Publisher:
Cambridge University Press (CUP)
Publication Date:
1995
detail.hit.zdb_id:
2498440-1
