In:
Journal of Nanomaterials, Hindawi Limited, Vol. 2016 ( 2016), p. 1-4
Kurzfassung:
We have studied the carrier densities n of multilayer and monolayer epitaxial graphene devices over a wide range of temperatures T . It is found that, in the high temperature regime (typically T ≥ 200 K), ln ( n ) shows a linear dependence of 1/ T , showing activated behavior. Such results yield activation energies Δ E for charge trapping in epitaxial graphene ranging from 196 meV to 34 meV. We find that Δ E decreases with increasing mobility. Vacuum annealing experiments suggest that both adsorbates on EG and the SiC/graphene interface play a role in charge trapping in EG devices.
Materialart:
Online-Ressource
ISSN:
1687-4110
,
1687-4129
DOI:
10.1155/2016/7372812
Sprache:
Englisch
Verlag:
Hindawi Limited
Publikationsdatum:
2016
ZDB Id:
2229480-6
