In:
Journal of Nanoscience and Nanotechnology, American Scientific Publishers, Vol. 8, No. 9 ( 2008-09-01), p. 4653-4657
Abstract:
Epitaxial growth of ZnO nanowires was carried out using a modified thermal evaporation method with inexpensive experimental setup. ZnO nanowires were synthesized using ZnO thin films. The ZnO thin films were deposited as a buffer layer on silicon and sapphire using an impinging flow
reactor (IFR). The IFR system is a modified version of a chemical bath deposition (CBD). Films can be created at low temperature, without any metallic catalysts. The properties of Zinc Oxide films are dependant upon the type of substrate used. The same deposition process with a different substrates yields two films with different properties. The most critical effect on growth of ZnO nanowires were dependent the properties of the buffer layer deposited on the substrate. It was not the type of substrate used. A cost-efficient method for epitaxial growth of single crystal ZnO nanowires is proposed in this work.
Type of Medium:
Online Resource
ISSN:
1533-4880
DOI:
10.1166/jnn.2008.IC82
Language:
English
Publisher:
American Scientific Publishers
Publication Date:
2008
SSG:
11
