In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 6, No. 1 ( 2011-04-04)
Kurzfassung:
In this article, we report that the origins of 1/ f noise in pm -Si:H film resistors are inhomogeneity and defective structure. The results obtained are consistent with Hooge's formula, where the noise parameter, α H , is independent of doping ratio. The 1/ f noise power spectral density and noise parameter α H are proportional to the squared value of temperature coefficient of resistance (TCR). The resistivity and TCR of pm -Si:H film resistor were obtained through linear current-voltage measurement. The 1/ f noise, measured by a custom-built noise spectroscopy system, shows that the power spectral density is a function of both doping ratio and temperature.
Materialart:
Online-Ressource
ISSN:
1556-276X
DOI:
10.1186/1556-276X-6-281
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2011
ZDB Id:
2253244-4
ZDB Id:
3149496-1
