In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 8, No. 1 ( 2013-12)
Abstract:
In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process.
Type of Medium:
Online Resource
ISSN:
1556-276X
DOI:
10.1186/1556-276X-8-497
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2013
detail.hit.zdb_id:
2253244-4
detail.hit.zdb_id:
3149496-1