In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 9, No. 1 ( 2014-12)
Kurzfassung:
We investigated the bipolar resistive switching characteristics of the resistive random access memory (RRAM) device with amorphous carbon layer. Applying a forming voltage, the amorphous carbon layer was carbonized to form a conjugation double bond conductive filament. We proposed a hydrogen redox model to clarify the resistive switch mechanism of high/low resistance states (HRS/LRS) in carbon RRAM. The electrical conduction mechanism of LRS is attributed to conductive sp 2 carbon filament with conjugation double bonds by dehydrogenation, while the electrical conduction of HRS resulted from the formation of insulating sp 3 -type carbon filament through hydrogenation process.
Materialart:
Online-Ressource
ISSN:
1556-276X
DOI:
10.1186/1556-276X-9-52
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
2014
ZDB Id:
2253244-4
ZDB Id:
3149496-1