In:
Nanoscale Research Letters, Springer Science and Business Media LLC, Vol. 15, No. 1 ( 2020-12)
Abstract:
In this paper, the hybrid β-Ga 2 O 3 Schottky diodes were fabricated with PEDOT:PSS as the anode. The electrical characteristics were investigated when the temperature changes from 298 K to 423 K. The barrier height ϕ b increases, and the ideality factor n decreases as the temperature increases, indicating the presence of barrier height inhomogeneity between the polymer and β-Ga 2 O 3 interface. The mean barrier height and the standard deviation are 1.57 eV and 0.212 eV, respectively, after taking the Gaussian barrier height distribution model into account. Moreover, a relatively fast response speed of less than 320 ms, high reponsivity of 0.6 A/W, and rejection ratio of R 254 nm / R 400 nm up to 1.26 × 10 3 are obtained, suggesting that the hybrid PEDOT:PSS/β-Ga 2 O 3 Schottky barrier diodes can be used as deep ultraviolet (DUV) optical switches or photodetectors.
Type of Medium:
Online Resource
ISSN:
1556-276X
DOI:
10.1186/s11671-020-03397-8
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2020
detail.hit.zdb_id:
2253244-4
detail.hit.zdb_id:
3149496-1