In:
Optics Express, Optica Publishing Group, Vol. 30, No. 2 ( 2022-01-17), p. 1808-
Kurzfassung:
Hyperdoped silicon (hSi) fabricated via femtosecond laser irradiation has emerged as a promising photoelectric material with strong broadband infrared (IR) absorption. In this work, we measured the optical absorptance of the hSi in the wavelength of 0.3–16.7 µm. Unlike the near to mid wavelength IR absorption, the mid-long wavelength IR (M–LWIR) absorption is heavily dependent on the surface morphology and the dopants. Furthermore, calculations based on coherent potential approximation (CPA) reveal the origin of free carrier absorption, which plays an important role in the M–LWIR absorption. As a result, a more comprehensive picture of the IR absorption mechanism is drawn for the optoelectronic applications of the hSi.
Materialart:
Online-Ressource
ISSN:
1094-4087
Sprache:
Englisch
Verlag:
Optica Publishing Group
Publikationsdatum:
2022
ZDB Id:
1491859-6
