In:
Optics Letters, Optica Publishing Group, Vol. 47, No. 3 ( 2022-02-01), p. 637-
Kurzfassung:
Self-powered ultraviolet detectors may find application in aviation and military fields. Here we demonstrate a self-powered asymmetric metal–semiconductor–metal (MSM) deep ultraviolet (DUV) detector with an Ni/Al electrode contact to AlN, and a photoelectric response current increase from dark current ( I d ) 2.6 × 10 −12 A to 1.0 × 10 −10 A after UV illumination ( I p ) at 0 V bias. To further improve device performance, trenches are etched in AlN, and the Ni/Al electrodes are deposited in trenches to form a three-dimensional MSM (3D-MSM) structure. The improved performance is attributed to the stronger electric field from the asymmetric electrode and a shorter carrier migration path from the 3D-MSM device configuration. Our work will promote the development and application of DUV self-powered devices.
Materialart:
Online-Ressource
ISSN:
0146-9592
,
1539-4794
Sprache:
Englisch
Verlag:
Optica Publishing Group
Publikationsdatum:
2022
ZDB Id:
243290-0