In:
Zeitschrift für Physikalische Chemie, Walter de Gruyter GmbH, Vol. 228, No. 4-5 ( 2014-5-28), p. 543-556
Kurzfassung:
Fabrication of Si nanodot single layers under ultrahigh vacuum (UHV)
conditions is achieved by decomposition and self-organized growth from thermally deposited non-stoichiometric SiO x ( x 〈 2)
precursor layers provided with an ultrathin SiO 2 capping layer
due to phase separation upon appropriate in situ annealing. The kinetics of the thermal decomposition of the constituting Si suboxides
(Si n + , n = 0…4) into Si nanodots and the
surrounding SiO 2 matrix is analyzed in situ by X-ray
photoelectron spectroscopy (XPS) as a function of the annealing temperature. The maximum size and the density of the nanodots are
varied by adjusting the stoichiometric coefficient x and the layer
thickness. Thus, the electronic nanodot properties and the interlayer transport properties can be controlled. For initial compositions ( x ranging from 0.9 to 1.4) and layer thicknesses (3 to
10 nm), phase separation was completed at 850 ℃. The phase separation revealed by XPS is
directly correlated with electrical properties as derived from atomic force microscopy measurements detecting surface potentials (KFM) and
local conductivity (CS-AFM) across individual nanodots.
Materialart:
Online-Ressource
ISSN:
0942-9352
,
2196-7156
DOI:
10.1515/zpch-2014-0482
Sprache:
Englisch
Verlag:
Walter de Gruyter GmbH
Publikationsdatum:
2014
ZDB Id:
201103-7
