In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 1074 ( 2008)
Abstract:
The crystalline structure, composition, chemical bonding and thermal stability of HfO 2 -Al 2 O 3 mixtures deposited on Si using a combinatorial pulsed laser deposition technique were investigated. After deposition some films were annealed at temperatures from 850 to 950 °C for 6 or 12 minutes. Grazing incidence x-ray diffraction investigations were performed to asses the crystallinity and thermal stability of the annealed layers. Measurements of the Al to Hf ratios were performed using energy dispersive x-ray spectroscopy and x-ray photoelectron spectroscopy. From simulations of the x-ray reflectivity and spectroscopic ellipsometry spectra the phase composition and thickness of the films was calculated and then the Al to Hf ratios. Al/Hf values of 1 and 8 were found to be necessary to block the crystallization of the films after anneals at 850 and 950 °C, respectively.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-1074-I03-18
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2008