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Evaluation of Silicon Carbide Formed with a Single Precursor of Di-Tert-Butylsilane

Tay, Sing-Pin ; Ellul, J. P. ; Hewitt, Susan B. ; [weitere]

Springer Science and Business Media LLC ; 1992

In: MRS Proceedings Vol. 242 ( 1992)

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In: MRS Proceedings, Springer Science and Business Media LLC, Vol. 242 ( 1992)

Kurzfassung: A low temperature process of silicon carbide deposition using the pyrolysis of di-tert-butylsilane has been explored for formation of emitter structures in silicon heterojunction bipolar transistors. Near stoichiometric amorphous silicon carbide films were achieved at 775°C. Doping and annealing of these films resulted in resistivity as low as 0.02 ohm-cm.

Materialart: Online-Ressource

ISSN: 0272-9172 , 1946-4274

URL: Article

DOI: 10.1557/PROC-242-525

Sprache: Englisch

Verlag: Springer Science and Business Media LLC

Publikationsdatum: 1992