In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 263 ( 1992)
Abstract:
The room temperature chemisorption of disilane on Ge(100) and subsequent reaction at elevated temperatures was investigated by core level photoemission spectroscopy. At room temperature Si 2 H 6 chemisorbs dissociatively on Ge(100) forming a surface populated largely by Si-H groups. Annealing the sample to 300°C effectively reduces the Si-H species to elemental Si. An additional anneal to 580°C promotes the diffusion of Si into the bulk and restores the Ge surface to an atomically clean state.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1992