In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 283 ( 1992)
Abstract:
Highly porous silicon, well passivated via an anodic oxidation process, is a stable and efficient visible light emitter showing a 3% photoluminescence efficiency at room temperature. Luminescence decay times are on the order of 100 μs at room temperature and 10 ms at low temperature. Above room temperature the de-excitation is dominated by non-radiative processes well describe by a tunnelling escape of carriers from confined regions. The “anomalous” luminescence behaviour showing a dramatic increase of the lifetimes upon cooling associated with a decrease of the intensity is explained by the temperature dependence of the effective radiative recombination rates due to a population redistribution among two excited states with very different radiative relaxation rates.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-283-241
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1992
