In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 337 ( 1994)
Kurzfassung:
The thermal stability at the Cu / SiO2 interface has been studied as a function of the annealing atmosphere composition. Using either good vacuum conditions or refractory metal encapsulation, no copper diffusion into SiO2 has been found even for thermal treatments at 500°C for l0h. Moreover, a noticeable accumulation of the refractory metal, ( Cr, Ti ), at the Cu / SiO2 interface has been observed. The diffusion phenomena allows the self-aligned formation of a refractory metal barrier layer at the SiO2 surface.
Materialart:
Online-Ressource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-337-225
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
1994