In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 387 ( 1995)
Kurzfassung:
This paper investigates conditions of low thermal budget N 2 O and NO oxidation with simultaneous accumulation of 0.5 to 1 at% nitrogen at the SiO 2 /Si interface of thin oxide layers. A nitrogen accumulation model is presented. It is concluded that the nitrogen accumulation should be realized with oxidizing conditions at the interface to silicon and it is proposed to control the NO partial pressure in reactor gas for the desired nitrogen amount at tolerable thermal budget.
Materialart:
Online-Ressource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-387-265
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
1995