In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 403 ( 1995)
Abstract:
The formation of silicon hillocks at the surface of amorphous and polycrystalline LPCVD silicon films, as a function of phosphorus doping was investigated by SEM, TEM replica and X-ray diffraction techniques. The phosphorus doping was performed in the concentration range from 9 × 10 19 cm -3 tol.5 × 10 20 cm -3 . It was observed that the hillocks size increases with the dopant concentration for the as-doped and for annealed films. The experimental data were analysed in a model involving diffusion of silicon during the doping and recrystallization processes.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-403-339
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1995
