In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 507 ( 1998)
Kurzfassung:
Device-quality a-Si:H films were prepared by glow discharge CVD with pure or H-diluted silane as well as by hot-wire CVD. The hydrogen content was varied from ∼2 to 15 at. %. The Si-H bond absorption and its light-soaking-induced changes were studied by IR and differential IR absorption spectroscopes. The results indicate that the more stable sample exhibits an increase of the absorption at wave number ∼2000 cm −1 , and the less stable one exhibits a decrease at ∼2040 cm −1 and an increase at ∼1880 cm −1 .
Materialart:
Online-Ressource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-507-685
Sprache:
Englisch
Verlag:
Springer Science and Business Media LLC
Publikationsdatum:
1998
