In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 596 ( 1999)
Abstract:
The preparation of ferroelectric and high dielectric perovskite materials, which is performed at high temperature (550–750°C) in oxidizing environments, provides strong limitations on the choice of electrode materials which have to be used for integration with semiconductor devices. To minimize interdiffusion and oxidation reactions, a diffusion barrier must be placed between Si substrate and electrode material (Pt, lrO 2 , RuO 2 .…). Ti 1-x Al x N thin films, deposited by reactive sputtering, are promising materials as electrically conductive layers and robust diffusion barriers. The stability of these films has been investigated at conditions typically used for crystallization of perovskite dielectrics. Films with various Al composition (x=0, 0.1, 0.2 and 0.4) have therefore been annealed by RTA (rapid thermal annealing) in 18 O 2 at 550–750°C. The concentration depth profiles of both 18 O and 27 A1 were measured before and after the RTA treatments via the narrow resonances of 18 O(p,α) 15 N at 151 keV (fwhm=100 eV) and 27 Al(p,γ) 28 Si at 992 keV (fwhm=100 eV). Al incorporation in the films reduces oxide growth especially at high annealing temperatures. The Al excitation curves indicate a uniform Al content for as deposited Ti 1−x Al x N, and reveal Al diffusion to the surface during oxidation which indicates the formation of an Al rich oxide layer at the Ti 1-x Al x N surface.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
1999
