In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 639 ( 2000)
Abstract:
We report on the effect of thermal annealing on the photoluminescence properties of a Ga 0.65 In 0.35 N 0.02 As 0.98 /GaAs single quantum well. Thermal annealing is shown to decrease the strong nitrogen-induced localization effects observed at low temperatures and to reduce the full width at half maximum of the emission peak. It also induces a strong blue shift of the emission peak energy, which is thought not to arise from an In-Ga interdiffusion alone, as it is much larger than in a nitrogen-free reference single quantum well.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-639-G6.3
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2000