In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 670 ( 2001)
Abstract:
This paper reports the dependence on the concentration of the germanium (Ge) in polycrystalline silicon (poly-Si) cap layer on the polycrystalline silicon germanium (poly-SiGe) for low resistivity cobalt disilicide (CoSi 2 ) formation. Particularly, we investigate the relationship between sheet resistance of CoSi 2 films and concentration of Ge in cap-Si layer. The excellent value of sheet resistance (∼6 / ) is achieved by Ge concentration in cap-Si layer controlled at 2% or less for 90nm length CoSi 2 /poly-Si/poly-SiGe gate structure. This result indicates that conventional Co silicide process technology can be readily used even for poly-SiGe gate structure.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-670-K5.10
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2001