In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 685 ( 2001)
Abstract:
In this work, high quality silicon dioxide (SiO 2 ) films were prepared by large-area plasmaenhanced chemical vapor deposition (LA-PECVD) using tetraethylorthosilicate(TEOS)-oxygen based chemistry. The effects of various short-time plasma treatments on these as-deposited TEOS oxide were also investigated. Different plasma treatments such as O 2 , N 2 O, and NH 3 were used in our experiments. Electrical characteristics were exploited to examine the effects of plasma treatments. It was shown that after N 2 O, and NH 3 plasma treatments, the electrical strength of oxide was enhanced. Besides, NH 3 plasma treatment exhibited the highest enhancement efficiency. O 2 - plasma treatment, however, showed some harmful effects on the electrical properties of the TEOS oxide. The reliability tests including charge to breakdown (Q bd ) and bias temperature stress (BTS) were also analyzed in these samples. Although better pre-stress characteristics were observed in those samples treated by NH 3 -plasma, samples with N 2 O plasma treatment showed superior stress endurance. Consequently, N 2 O plasma treatment seems to be the best candidate for future TFTs under the consideration of long-term reliability.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/PROC-685-D5.3.1
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2001
