In:
MRS Internet Journal of Nitride Semiconductor Research, Springer Science and Business Media LLC, Vol. 5, No. S1 ( 2000), p. 768-774
Abstract:
Optical second and third harmonic generation measurements were carried out on GaN layers grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The measured d 33 is 33 times the d 11 of quartz. The angular dependence of second-harmonic intensity as well as the measured ratios d 33 /d 15 = −2.02 and d 33 /d 31 =−2.03 confirm the wurzite structure of the studied GaN layers with the optical c-axis oriented perpendicular to the sample surface. Fine oscillations were observed in the measured second and third harmonic angular dependencies. A simple model based on the interference of the fundamental beam in the sample was used to explain these oscillations.
Type of Medium:
Online Resource
ISSN:
1092-5783
DOI:
10.1557/S1092578300005056
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2000
detail.hit.zdb_id:
2021992-1