In:
MRS Bulletin, Springer Science and Business Media LLC, Vol. 40, No. 5 ( 2015-05), p. 412-417
Abstract:
Recent successes with the fabrication of high-performance GaN-based heterostructures on silicon substrates have made this technology very promising. However, epitaxial growth of GaN on Si is challenging. This article presents some of the challenges of epitaxial growth of GaN-on-Si substrates focusing on basic aspects that are pertinent to consider for power electronics.
Type of Medium:
Online Resource
ISSN:
0883-7694
,
1938-1425
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2015
detail.hit.zdb_id:
2749565-6
detail.hit.zdb_id:
2136359-6
