In:
MRS Proceedings, Springer Science and Business Media LLC, Vol. 1763 ( 2015)
Abstract:
This work presents an adsorption model based on the Sips isotherm for sensing different concentrations of DNA with open gate AlGaN/GaN high electron mobility field effect transistors (HEMTs). Probe-DNA was immobilized on the transistor gate before the application of target-DNA. Concentrations of 10 -15 to 10 -6 mol/L were tested. The sensor has a detection limit of 10 -12 mol/L and saturates after the addition of 10 -8 mol/L target-DNA.
Type of Medium:
Online Resource
ISSN:
0272-9172
,
1946-4274
DOI:
10.1557/opl.2015.131
Language:
English
Publisher:
Springer Science and Business Media LLC
Publication Date:
2015
