In:
EDFA Technical Articles, ASM International, Vol. 10, No. 1 ( 2008-02-01), p. 24-29
Abstract:
With the introduction of 65 nm technology, the cross-sectional dimensions of copper interconnect in some layers are now smaller than 100 nm, which translates to current densities on the order of several MA/cm2. Electromigration as a root cause for chip failure is thus a major concern and is still being examined. In this article, the authors present recent failure analysis studies on metal-coated copper interconnects, using OBIRCH techniques in combination with FIB cross-sectioning and SEM and TEM imaging.
Type of Medium:
Online Resource
ISSN:
1537-0755
DOI:
10.31399/asm.edfa.2008-1.p024
Language:
English
Publisher:
ASM International
Publication Date:
2008