In:
Frontiers in Materials, Frontiers Media SA, Vol. 8 ( 2021-8-18)
Abstract:
To achieve the highest possible integration storage density in the V-point structure, the working current of the selector in the one-selection one-resistance (1S1R) structure should match with the resistance random access memory (RRAM). In this study, a selector device is designed with a Ti/NbO x /Ti/Pt structure through the magnetron sputtering method and achieves excellent performance of threshold switching under ultra-large compliance current (CC) up to 100 mA. Furthermore, both the switching voltages and the OFF-state resistance of the device demonstrate excellent stability even when CC is increased to a milliampere level, attributed from the existence of metallic NbO in the switching layer. This study provides evidence that a Ti/NbO x /Ti/Pt device has a great potential to drive RRAM in the V-point structure.
Type of Medium:
Online Resource
ISSN:
2296-8016
DOI:
10.3389/fmats.2021.716065
Language:
Unknown
Publisher:
Frontiers Media SA
Publication Date:
2021
detail.hit.zdb_id:
2759394-0