In:
Nanomaterials, MDPI AG, Vol. 12, No. 14 ( 2022-07-16), p. 2438-
Kurzfassung:
In this work, we show the design of a silicon photonic-based polarization converting device based on the integration of semiconduction InP nanowires on the silicon photonic platform. We present a comprehensive numerical analysis showing that full polarization conversion (from quasi-TE modes to quasi-TM modes, and vice versa) can be achieved in devices exhibiting small footprints (total device lengths below 20 µm) with minimal power loss ( 〈 2 dB). The approach described in this work can pave the way to the realization of complex and re-configurable photonic processors based on the manipulation of the state of polarization of guided light beams.
Materialart:
Online-Ressource
ISSN:
2079-4991
DOI:
10.3390/nano12142438
Sprache:
Englisch
Verlag:
MDPI AG
Publikationsdatum:
2022
ZDB Id:
2662255-5
