In:
Beilstein Journal of Nanotechnology, Beilstein Institut, Vol. 10 ( 2019-07-15), p. 1401-1411
Abstract:
This study deals with the preparation and characterization of metallic nanoinclusions on the surface of semiconducting Bi 2 Se 3 that could be used for an enhancement of the efficiency of thermoelectric materials. We used Au forming a 1D alloy through diffusion (point nanoinclusion) and Mo forming thermodynamically stable layered MoSe 2 nanosheets through the reaction with the Bi 2 Se 3 . The Schottky barrier formed by the 1D and 2D nanoinclusions was characterized by means of atomic force microscopy (AFM). We used Kelvin probe force microscopy (KPFM) in ambient atmosphere at the nanoscale and compared the results to those of ultraviolet photoelectron spectroscopy (UPS) in UHV at the macroscale. The existence of the Schottky barrier was demonstrated at +120 meV for the Mo layer and −80 meV for the Au layer reflecting the formation of MoSe 2 and Au/Bi 2 Se 3 alloy, respectively. The results of both methods (KPFM and UPS) were in good agreement. We revealed that long-time exposure (tens of seconds) to the electrical field leads to deep oxidation and the formation of perturbations greater than 1 µm in height, which hinder the I – V measurements.
Type of Medium:
Online Resource
ISSN:
2190-4286
DOI:
10.3762/bjnano.10.138
Language:
English
Publisher:
Beilstein Institut
Publication Date:
2019
detail.hit.zdb_id:
2583584-1
