In:
Beilstein Journal of Nanotechnology, Beilstein Institut, Vol. 7 ( 2016-11-16), p. 1727-1735
Abstract:
In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from diamond, i.e., by using aluminium as Schottky contact on a hydrogen terminated diamond surface. By changing the applied potential on the Schottky contact, we are able to actively switch single NV centres between all three charge states NV + , NV 0 and NV − on a timescale of 10 to 100 ns, corresponding to a switching frequency of 10–100 MHz. This switching frequency is much higher than the hyperfine interaction frequency between an electron spin (of NV − ) and a nuclear spin (of 15 N or 13 C for example) of 2.66 kHz. This high-frequency charge state switching with a planar diode structure would open the door for many quantum optical applications such as a quantum computer with single NVs for quantum information processing as well as single 13 C atoms for long-lifetime storage of quantum information. Furthermore, a control of spectral emission properties of single NVs as a single photon emitters – embedded in photonic structures for example – can be realized which would be vital for quantum communication and cryptography.
Type of Medium:
Online Resource
ISSN:
2190-4286
DOI:
10.3762/bjnano.7.165
Language:
English
Publisher:
Beilstein Institut
Publication Date:
2016
detail.hit.zdb_id:
2583584-1
