In:
Chinese Optics Letters, Shanghai Institute of Optics and Fine Mechanics, Vol. 10, No. 1 ( 2012), p. 013102-13105
Materialart:
Online-Ressource
ISSN:
1671-7694
Originaltitel:
Low power consumption bipolar resistive switching characteristics of ZnO-based memory devices
DOI:
10.3788/COL/2012/10/1
DOI:
10.3788/COL201210.013102
Sprache:
Englisch
,
Chinesisch
Verlag:
Shanghai Institute of Optics and Fine Mechanics
Publikationsdatum:
2012