In:
Chinese Journal of Luminescence, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Vol. 34, No. 12 ( 2013), p. 1646-1650
Materialart:
Online-Ressource
ISSN:
1000-7032
Originaltitel:
Al组分对MOCVD制备的Al
x
Ga
1-x
N/AlN/GaN HEMT电学和结构性质的影响
DOI:
10.3788/fgxb/2013/34/12
DOI:
10.3788/fgxb20133412.1646
Sprache:
Englisch
,
Chinesisch
Verlag:
Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences
Publikationsdatum:
2013