In:
Applied Mechanics and Materials, Trans Tech Publications, Ltd., Vol. 665 ( 2014-10), p. 136-139
Abstract:
HfAlO x based RRAM devices were fabricated using atomic layer deposition by modulating deposition cycles for HfO 2 and Al 2 O 3 . The effect of rapid thermal annealing (RTA) on the resistive switching uniformity of HfAlOx based RRAM devices was investigated. Compared to the as-deposited devices, the resistive switching uniformity of HfAlO x based RRAM devices after RTA treatment are remarkably improved. The uniformity improvement of HfAlO x based RRAM after RTA treatment is related to microstructure change in the resistive switching film.
Type of Medium:
Online Resource
ISSN:
1662-7482
DOI:
10.4028/www.scientific.net/AMM.665
DOI:
10.4028/www.scientific.net/AMM.665.136
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2014
detail.hit.zdb_id:
2251882-4