In:
Applied Mechanics and Materials, Trans Tech Publications, Ltd., Vol. 734 ( 2015-2), p. 796-801
Abstract:
A series of Li-doped zinc oxide ( ZnO ) thin films were deposited on quartz glass by sol-gel and spin coating method. Their p-type conductivities could be achieved by subsequently thermal annealing process, which were characterized by Hall effect measurement. An optimized result with resistivity of 46.8 Ω cm, Hall mobility of 1.35 cm2/V s, and hole concentration of 9.89×1016 cm-3 was achieved at the annealing temperature of 700 °C. The films exhibited highly (002) oriented growth in all the cases. Strong green emission centered at 510 nm was observed by photoluminescence spectra in Li-doped ZnO films at room temperature.
Type of Medium:
Online Resource
ISSN:
1662-7482
DOI:
10.4028/www.scientific.net/AMM.734
DOI:
10.4028/www.scientific.net/AMM.734.796
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2015
detail.hit.zdb_id:
2251882-4