In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 391-392 ( 2011-12), p. 1041-1046
Abstract:
In order to clarify the role of Dy 3+ on persistent luminescence properties of MgSiO 3 :Mn 2+ , Dy 3+ and explain the persistent luminescent mechanism, the positron annihilation technique was used to study the defect states of MgSiO 3 :Mn 2+ , Dy 3+ . It was revealed that the structure of deeper traps were not normally respected Mg 2+ vacancies and oxygen vacancies but the associated defect V"Mg-2Dy•Mg which emerged by Dy 3+ doping in MgSiO 3 :Mn 2+ . This associated defect V"Mg-2Dy•Mg resulted in the excellent persistent luminescence in MgSiO 3 :Mn 2+ , Dy 3+ phosphor and a possible persistent luminescent mechanism for MgSiO 3 :Mn 2+ , Dy 3+ was given.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.391-392
DOI:
10.4028/www.scientific.net/AMR.391-392.1041
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2011
detail.hit.zdb_id:
2265002-7