In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 531 ( 2012-6), p. 185-188
Abstract:
We consider a bulk silicon crystal as a Mid-IR Raman amplifier and study its Raman amplification. A Raman amplifier is established when an intense pump laser pulse and a Raman laser pulse pass through one silicon simultaneously, with good spatial and temporal overlap. Considering the situation of pumping wavelength at 2.94 μm achievable by using an Er:YAG laser and Raman laser wavelength at 3.47 μm with the 521 cm-1 Raman shift, the properties of the output amplified Raman laser are investigated by numerically solving the coupled transfer equations.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.531
DOI:
10.4028/www.scientific.net/AMR.531.185
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2012
detail.hit.zdb_id:
2265002-7