In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 60-61 ( 2009-1), p. 256-259
Abstract:
Multifunctional BiFeO3 (BFO) thin films were deposited on Bi3.15Nd0.85Ti3O12 (BNdT)/Pt and Pb(Zr1−x,Tix)O3 (PZT)/Pt substrates respectively by sol-gel process. The ferroelectric properties were studied for Metal-Ferroelectric-Mental (MFM) capacitors. The MFM structure exhibited well clockwise capacitance-voltage hysteresis loops due to the ferroelectric polarization of multilayer thin films achieved. The remnant polarization (2Pr) of the BFO/PZT and BFO/PZT multilayer capacitors were 45.1μC/cm2 and 23.2μC/cm2, respectively at the applied voltage of 8V. The leakage current of Pt/BFO/BNdT/Pt is about 3×10-5A/㎝2 at applied voltage of 4V, one order smaller than Pt/BFO/PZT/Pt capacitor. For the BFO/BNdT/Pt, it exhibited a weak saturated ferromagnetic response at room temperature and the multilayer was anti-ferromagnetic. However, for the BFO/PZT/Pt, well-developed M-H loops together with remnant magnetizations can be observed in at room temperature. The highest saturation magnetizations (Ms) of both capacitors were measured to be 2.47emu/cm3.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.60-61
DOI:
10.4028/www.scientific.net/AMR.60-61.256
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2009
detail.hit.zdb_id:
2265002-7
