In:
Advanced Materials Research, Trans Tech Publications, Ltd., Vol. 658 ( 2013-1), p. 112-115
Abstract:
RF characteristics of metal-insulator-metal (MIM) capacitors with SiO2/HfO2/SiO2 (SHS) were investigated using an equivalent circuit model that is associated with the main impedance ZMIM.cap and the substrate-related conductance Ysub. However, the parasitic capacitance in Ysub was lower than that of another element component in ZMIM.cap, which makes difficult for accurate RF modeling because the parasitic component was dominant at high frequency regions. As low parasitic component is eliminated from the modeling, the extracted capacitance for SHS MIM capacitor was stable up to 20 GHz. The Q-factor and resonant frequency (fr) point of SHS structure are 23.9 at 1 GHz and 9.76 GHz, respectively.
Type of Medium:
Online Resource
ISSN:
1662-8985
DOI:
10.4028/www.scientific.net/AMR.658
DOI:
10.4028/www.scientific.net/AMR.658.112
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2013
detail.hit.zdb_id:
2265002-7