In:
Key Engineering Materials, Trans Tech Publications, Ltd., Vol. 552 ( 2013-5), p. 389-392
Abstract:
2.3 μm InGaAsSb/AlGaAsSb lasers with multiple quantum wells(MQWs) have been demonstrated.The growth temperature of quantum wells is 440°C,and the growth quality of InGaAsSb/AlGaAsSb MQWs is examined by X-ray diffraction and Photoluminescence(PL) at room temperature.The energy band structure of MQWs was calculated by one-dimensional finite-difference method(1D-FDM)
Type of Medium:
Online Resource
ISSN:
1662-9795
DOI:
10.4028/www.scientific.net/KEM.552
DOI:
10.4028/www.scientific.net/KEM.552.389
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2013
detail.hit.zdb_id:
2073306-9