In:
Key Engineering Materials, Trans Tech Publications, Ltd., Vol. 727 ( 2017-1), p. 942-946
Abstract:
Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10 -6 A/cm 2 and 5.35×10 -8 A/cm 2 respectively.
Type of Medium:
Online Resource
ISSN:
1662-9795
DOI:
10.4028/www.scientific.net/KEM.727
DOI:
10.4028/www.scientific.net/KEM.727.942
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2017
detail.hit.zdb_id:
2073306-9