In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 527-529 ( 2006-10), p. 215-218
Kurzfassung:
In this paper, we attempted to grow semi-insulating SiC epitaxial layer by in-situ iron
doping. Homoepitaxial growth of iron-doped 4H-SiC layer was performed by MOCVD using organo-silicon precursor, bis-trimethylsilylmethane (BTMSM, [C7H20Si2]) and metal organic precursor, t-butylferrocene ([C14H17Fe]). Doping-induced crystallinity degradation showed different tendency depending on conducting type of substrate. The crystal quality of epilayer grown on n-type
substrate was not degraded significantly despite of the Fe doping but in case of semi-insulating substrate, crystallinity was remarkably degraded as increasing iron contents. For measurement of
resistivity of highly resistive iron-doped 4H-SiC epilayer, we used the on-resistance technique which is firstly attempted for measuring resistivity of epilayer. From on-resistance of epilayer measured by
I-V, it is shown that the residual donor concentration of epilayer was decreased as increasing partial pressure of t-butylferrocene. The resistivity of iron-doped 4H-SiC epilayer was about 107 Ωcm. From
this result, it is concluded that Fe could effectively act as a compensation center in the iron-doped 4H-SiC.
Materialart:
Online-Ressource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.527-529
DOI:
10.4028/www.scientific.net/MSF.527-529.215
Sprache:
Unbekannt
Verlag:
Trans Tech Publications, Ltd.
Publikationsdatum:
2006
ZDB Id:
2047372-2
