In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 556-557 ( 2007-9), p. 109-112
Abstract:
Homoepitaxial growth of 4H-SiC p+/π/n- multi-epilayer on n+ substrate and in-situ doping
of p+ and π-epilayer have been achieved in the LPCVD system with SiH4+C2H4+H2. The surface morphologies, homogeneities and doping concentrations of the n--single-epilayers and the p+/π/n-
multi-epilayers were investigated by Nomarski, AFM, Raman and SIMS, respectively. AFM and Raman investigation showed that both single- and multi-epilayers have good surface morphologies
and homogeneities, and the SIMS analyses indicated the boron concentration in p+ layer was at least 100 times higher than that in π layer. The UV photodetectors fabricated on 4H-SiC p+/π/n-
multi-epilayers showed low dark current and high detectivity in the UV range.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.556-557
DOI:
10.4028/www.scientific.net/MSF.556-557.109
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2007
detail.hit.zdb_id:
2047372-2