In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 556-557 ( 2007-9), p. 335-338
Abstract:
The dependence of donor-acceptor pair (DAP) emission properties on impurity
concentrations of N and B in 6H-SiC epilayers was investigated. Doped samples were grown by closed sublimation technique, and impurity concentrations were confirmed by secondary ion mass
spectrometry (SIMS). Photoluminescence (PL) measurement results indicate that p-type 6H-SiC with NA 〉 ND had extremely low DAP emission efficiency, whereas n-type 6H-SiC with NA 〈 ND showed
intense DAP emission. Moreover, n-type 6H-SiC with high N and B concentrations exceeding 1018cm-3 is preferable for high DAP emission efficiency.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.556-557
DOI:
10.4028/www.scientific.net/MSF.556-557.335
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2007
detail.hit.zdb_id:
2047372-2
