In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 573-574 ( 2008-3), p. 295-304
Kurzfassung:
This paper reviews the physics and the potential application of ion-implanted vacancies
for high-performance B-doped ultra-shallow junctions. By treatment of silicon films with vacancygenerating implants prior to boron implantation, electrically active boron concentrations
approaching 1021 cm-3 can be achieved by Rapid Thermal Annealing at low temperatures, without the use of preamorphisation. Source/drain (S/D) junctions formed by advanced vacancy engineering
implants (VEI) are activated far above solubility. Furthermore, in the case of appropriately engineered thin silicon films, this activation is stable with respect to deactivation and the doping
profile is practically diffusionless. Sheet resistance Rs is predicted to stay almost constant with decreasing junction depth Xj, thus potentially outperforming other S/D engineering approaches at
the ‘32 nm node’ and beyond.
Materialart:
Online-Ressource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.573-574
DOI:
10.4028/www.scientific.net/MSF.573-574.295
Sprache:
Unbekannt
Verlag:
Trans Tech Publications, Ltd.
Publikationsdatum:
2008
ZDB Id:
2047372-2