In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 609 ( 2009-1), p. 123-127
Abstract:
An advanced equipment for the charge version of deep level transient spectroscopy (Q-DLTS) and C-V measurements with newly developed software on LabView platform is presented. The ability to record several Q-DLTS behaviors with different rate windows simultaneously is the most important property of the equipment. Q-DLTS with excitation of the MOS structures by low-voltage step and time domain C-V measurements were used to determine interface properties. The contribution presents mainly results obtained on very-thin oxide/n-type crystalline Si structures prepared by oxidation at very low temperatures in nitric acid solutions with various concentrations.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.609
DOI:
10.4028/www.scientific.net/MSF.609.123
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2009
detail.hit.zdb_id:
2047372-2
