In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 615-617 ( 2009-3), p. 621-624
Abstract:
The adjustment of the properties of 3C-SiC based MEMS devices, i.e. the quality factor and resonant frequency, was achieved by changing the residual stress and the 3C-SiC material quality of the SiC-layers grown on Si(111) by manipulating the nucleation conditions and growth conditions with Ge deposition prior to the carbonization and epitaxial growth. Previous Raman analysis of the SiC-layers and measured resonant frequencies and quality factors of the processed MEMS show a dependence on the Ge amount at the interface of the Si/SiC heterostructure, which allows to adjust the MEMS properties to the requirements needed for certain applications.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.615-617
DOI:
10.4028/www.scientific.net/MSF.615-617.621
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2009
detail.hit.zdb_id:
2047372-2