In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 687 ( 2011-6), p. 106-111
Abstract:
Cu x O and SiO 2 thin films were deposited using a radio-frequency magnetron sputter on Pt/Ti/SiO 2 /Si substrates to form SiO 2 /Cu x O/Pt and Cu x O/Pt structures. The current-voltage characteristics were measured by DC voltage sweeping using a tungsten (W) probe. The two structures needed a large voltage to initiate the first resistive switching; this sweep was called the forming process. Afterwards, the resistances of the two structures could be switched reversibly between the low-resistance-state (LRS) and high-resistance-state (HRS) by applying a DC voltage. The conduction mechanisms of the LRS and the HRS were dominated by Ohmic conduction. Structures with non-destructive readout characteristics and long retention time were suitable for use in non-volatile memory. The difference between resistive switching in W-probe/SiO 2 /Cu x O/Pt and W-probe/Cu x O/Pt structures was investigated. The additional SiO 2 layer decreased the switching voltages and currents; this should be due to the presence of pinholes within the SiO 2 layer. The influence of SiO 2 thickness on the resistive switching characteristics was also investigated. The switching voltages and currents, except the forming voltage, decreased as the thickness of SiO 2 decreased. The conducting filament model with a thermochemical reaction was suggested to best explain the resistive switching behavior that was observed.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.687
DOI:
10.4028/www.scientific.net/MSF.687.106
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2011
detail.hit.zdb_id:
2047372-2
