In:
Materials Science Forum, Trans Tech Publications, Ltd., Vol. 695 ( 2011-7), p. 9-12
Abstract:
We have annealed the thin layer of the amorphous silicon (a-Si) using the Q-swtiched Nd:YAG laser pulses in order to transform the a-Si into polycrystalline silicon (poly-Si) and investigated the crystalline structures of the poly-Si. Before illuminating the light to the layer, the frequency of the laser was doubled through the second harmonic generation (SHG) process to enhance the absorption efficiency of the optical energy. When the optical energy was higher than 500 mJ/cm 2 , we could obtain the micro-crystalline structure with grain size as large as 500 nm.
Type of Medium:
Online Resource
ISSN:
1662-9752
DOI:
10.4028/www.scientific.net/MSF.695
DOI:
10.4028/www.scientific.net/MSF.695.9
Language:
Unknown
Publisher:
Trans Tech Publications, Ltd.
Publication Date:
2011
detail.hit.zdb_id:
2047372-2